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2N5686 50A 80 V NPN Bipolar High Power Amplifier Switching Transistor
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 300
Maximum collector-base voltage |Ucb|, V: 80
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 50
Maksimalna temperatura (Tj), °C: 200
Transition frequency (ft), MHz: 2
Collector capacitance (Cc), pF: 1000
Forward current transfer ratio (hFE), min: 15
Package of 2N5686 transistor: TO-3
We can ship the same day as getting order and confirmed payment.
2N5684 NPN COMPLEMENT
2N5686 50A 80 V NPN Bipolar Hi Power Amplifier Switching Transistor new
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