When you click on links to various merchants on this site and make a purchase, this can result in this site earning a commission. Affiliate programs and affiliations include, but are not limited to, the eBay Partner Network.
Lot of 4 pcs
New, never used /NOS / New Old Stock
KT203BM
Transistors KT203BM silicon epitaxial-planar structures p-n-p amplifying.
Designed for use in amplifiers and pulse devices.
KT203BM:
• Structure of the transistor: p-n-p
• Рк max - Constantly dissipated collector power: 150 mW;
• fgr - Boundary frequency of the transistor current transfer factor for a common emitter circuit: at least 5 MHz;
• UCBO max - Maximum collector-base voltage for a given collector return current and open-circuit emitter: 30 V;
• Ueb max - The maximum emitter-base voltage for a given reverse current of the emitter and open collector circuit: 15 V;
• Iк max - Maximum permissible constant collector current: 10 mA;
• Iкбо - Return current of the collector - current through the collector junction with the given collector-base return voltage and the open emitter terminal: no more than 1 μA;
• h21e - Static current transfer coefficient of the transistor in the low-signal mode for circuits with a common emitter: 30 ... 150;
• Rke us - Resistance of saturation between the collector and the emitter: 50 Ohm
We can supply other items made in USSR.
We have more such items in stock.Payment:
We accept PayPal Only!
Popular Tutorials
Alarms and Indicator Circuit diagrams