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Is offered
One Piece transistor
MGF 1302
GaAs FET transistor to 4 GHz for RF applications
extremely low noise in the frequency range 100 -2000 MHz.
ID max. 100 mA
Ptot 300 mW
F 1.4 dB / 4 GHz
MGF 1302 Low Noise GaAs FET
description
The MGF 1302 is a low-noise GaAs FET with N-channel Schottky gate, Which is designed for use in S to X band-amplifiers and oscillators. The hermetically sealed metal ceramic package Assures minimum parasitic losses, and has a configuration Suitable for microstrip circuits.
Features
Low noise figure NFmin = 1.4 dB (max.) f = 4 GHz
High associated gain Gs = 11 dB (min.) F = 4 GHz
High reliability and stability
Application
S to X band-amplifiers and oscillators
RECOMMENDED BIAS CONDITIONS
VDS = 3 V
ID = 10 mA
Refer to bias Procedure
On request, data sheet by e-mail!
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