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SiC 1.2kV Transistor: N-MOSFET Idm: 80A unipolar 207W 29A Technical specifications
Manufacturer: GeneSiC SEMICONDUCTOR
Transistor type: N-MOSFET
Technology: G3R™
Technology: SiC
Polarization: unipolar
Drain-Source Voltage: 1.2kV
Drain current: 29A
Drain current in pulse: 80A
Power dissipation: 207W
Case: TO247-3
Gate-source voltage: -5...15V
Resistance in line state: 75mΩ
Mounting: THT
Gate charge: 54nC
Packing Type: Tube
Channel Type: Strong
SiC 1.2kV Transistor: N-MOSFET IDM: 80A UNIPOLAR 207W 29A
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